Infineon ISC058N04NM5: High-Performance N-Channel MOSFET for Power Management Applications

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance is a constant driver in the field of electronics design. At the heart of many advanced power management systems, from high-frequency DC-DC converters to sophisticated motor control units, lies the power MOSFET. The Infineon ISC058N04NM5 stands out as a premier N-channel MOSFET engineered to meet these demanding challenges, offering a compelling blend of low losses, robust switching performance, and high reliability.

This MOSFET is built upon Infineon's advanced OptiMOS 5 technology, a platform renowned for its exceptional figure of merit (FOM). The device is characterized by an ultra-low on-state resistance (R DS(on)) of just 0.58 mΩ (max. at V GS = 10 V), which is a critical parameter for minimizing conduction losses. When a high current flows through the switch, a lower R DS(on) translates directly into less energy wasted as heat, leading to cooler operation and significantly higher overall system efficiency. This makes the ISC058N04NM5 an ideal choice for high-current applications.

Complementing its low conduction losses are its outstanding switching characteristics. The device features low gate charge (Q G) and low effective output capacitance (C OSS(eff)), which are essential for achieving fast switching speeds. This capability is paramount in high-frequency switching regulators, where it allows for the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall footprint of the power solution. The fast switching enables designers to push the boundaries of frequency while maintaining control over switching losses.

The ISC058N04NM5 is rated for a drain-source voltage (V DS) of 40 V, making it perfectly suited for a wide array of industrial and automotive applications, including but not limited to:

High-Current DC-DC Converters (e.g., in server and telecom power supplies)

Motor Drive and Control Circuits (e.g., for robotics, drones, and automotive systems)

Battery Management Systems (BMS) and Load Switching

Synchronous Rectification in switch-mode power supplies (SMPS)

Furthermore, the device is housed in an SuperSO8 package (PG-TSDSON-8), which offers an excellent thermal footprint. This package ensures very low thermal resistance from junction to case (R thJC), facilitating efficient heat dissipation away from the silicon die. This robust thermal performance is crucial for maintaining device reliability under continuous high-stress operating conditions.

ICGOOODFIND: The Infineon ISC058N04NM5 is a high-performance N-channel MOSFET that sets a high standard for power management design. Its exceptional combination of ultra-low on-resistance, fast switching speed, and superior thermal performance provided by OptiMOS 5 technology makes it a top-tier component for designers aiming to maximize efficiency and power density in demanding 40V applications across industrial and automotive sectors.

Keywords: OptiMOS 5, Low R DS(on), High-Frequency Switching, Power Management, SuperSO8 Package.