Infineon IPD040N03LG: High-Performance 30V Single N-Channel MOSFET in a Compact PG-TSDSON-8 Package

In the relentless pursuit of higher power density and efficiency in modern electronic designs, the selection of the right MOSFET is paramount. The Infineon IPD040N03LG stands out as a premier solution, engineered to deliver exceptional performance in a remarkably small footprint. This single N-channel MOSFET is optimized for a wide range of applications, from advanced computing and telecom infrastructure to portable electronics and power management systems.

A key highlight of the IPD040N03LG is its ultra-low on-state resistance (R DS(on)) of just 4.0 mΩ at 10 V. This exceptionally low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and improved thermal performance. Designers can achieve more power handling capability without a corresponding increase in the size of their thermal management solutions, enabling sleeker and more compact end products.

The device is housed in the PG-TSDSON-8 package, a key factor in its appeal for space-constrained applications. This package offers an excellent balance between a minimal PCB footprint and effective thermal dissipation. The exposed pad allows for efficient heat transfer from the silicon die to the circuit board, ensuring reliable operation even under demanding load conditions. This makes the MOSFET an ideal choice for point-of-load (POL) converters, synchronous rectification, and motor control circuits where board space is at a premium.

Furthermore, the IPD040N03LG is characterized by its 30V drain-source voltage (V DS) rating, making it perfectly suited for low-voltage power conversion tasks commonly found in computing and server environments, such as 12V and 24V intermediate bus architectures. Its logic-level gate drive ensures easy control with modern microcontrollers and DSPs, simplifying driver circuit design.

Robustness and reliability are integral to its design. The MOSFET features a high peak current capability and is qualified according to the highest automotive standards, underscoring its suitability not only for industrial and consumer applications but also for demanding automotive environments.

ICGOODFIND: The Infineon IPD040N03LG is a top-tier power MOSFET that masterfully combines high efficiency, superior thermal performance, and a minimized form factor. Its ultra-low R DS(on) in the compact PG-TSDSON-8 package makes it an exceptional component for designers aiming to push the boundaries of power density and energy efficiency in their next-generation applications.

Keywords: Low R DS(on), Power Density, PG-TSDSON-8, Logic-Level Gate, Synchronous Rectification.