Samsung Electronics has begun mass production of V8 (236-layer) 3D NAND flash at its Xi’an, China wafer fab, following a process upgrade that began in 2024. The facility converted existing V6 (128-layer) NAND production lines to boost performance and capacity.

The move positions Samsung to meet surging demand for high-performance storage driven by AI applications. Following the V8 ramp, the Xi’an fab is already targeting V9 (286-layer) NAND, with production planned at the X2 facility later this year.

ICgoodFind : Samsung’s Xi’an fab just kicked off 236-layer NAND production. With V9 already on deck, high-end storage supply is getting a serious boost.