Infineon IPD60R180P7ATMA1: A Benchmark in High-Efficiency Power Conversion

The Infineon IPD60R180P7ATMA1 represents a significant advancement in high-voltage power transistor technology, delivering exceptional performance for demanding applications. As part of Infineon’s renowned CoolMOS™ P7 series, this 600V, 180mΩ MOSFET sets a new standard in efficiency, thermal management, and reliability in power electronics systems.

Engineered with Infineon’s superjunction technology, the IPD60R180P7ATMA1 minimizes switching and conduction losses, making it particularly suitable for high-frequency switch-mode power supplies (SMPS), industrial motor drives, renewable energy inverters, and lighting control systems. Its low on-state resistance (RDS(on)) of just 180mΩ ensures reduced power dissipation, contributing to higher system efficiency and lower operational temperatures.

One of the standout features of this transistor is its enhanced avalanche ruggedness, which provides increased durability in harsh operating environments. This makes it an excellent choice for applications requiring high reliability and long-term stability. Additionally, the component’s low gate charge (Qg) and improved figure of merit (FOM) allow for faster switching speeds, enabling more compact and efficient power supply designs.

The device is housed in a TO-220 full-pack (FP) package, which offers superior thermal performance and simplifies mounting and heat dissipation. This package style is widely preferred in industrial and automotive contexts where thermal management is critical.

With its combination of high voltage capability, low resistance, and robust switching characteristics, the Infineon IPD60R180P7ATMA1 is a top-tier solution for designers seeking to push the boundaries of power density and energy efficiency.

ICGOODFIND:

The Infineon IPD60R180P7ATMA1 stands out as a high-performance CoolMOS™ power transistor, offering superior efficiency, thermal performance, and reliability for next-generation power systems.

Keywords:

CoolMOS™ P7,

600V MOSFET,

180mΩ RDS(on),

superjunction technology,

avalanche ruggedness